General Description
The APMAPM4953 has dual P-channel MOSFET in one package, uses advanced trench technology to provide excellent Rds(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
● VDSS=-20V
● ID=-4.0A@VGS=-10V
● RDS(on)=75ma(Typ.)@VGS=-10V
● RDS(on)=86ma(Typ.)@VGS=-4.5V
● RDS(on)=105ma(Typ.)@VGS=-2.5V
● Advanced high cell density Trench technology
● Excellent CdV/ dt effect decline
● Super Low Gate Charge
● High Power and current handing capability
● Package: SOP-8L
● Pb-Free and Green devices are available
Applications
● Load Switch
● Battery Switch
● PWM Applications
● Power Management
























































联系电话:137 5117 9101
企业邮箱:https://www.hsesf.net